Silicon Carbide Controller
SiC components introduce a superior class of performance, previously impossible with traditional silicon devices, with the ability to withstand higher voltages alongside greater efficiencies.
SiC components
As a part of our research and development portfolio, significant effort is spent testing and creating new designs with the latest technologies available for motor control. One of these technologies is Silicon Carbide MOSFETs. SiC components introduce a superior class of performance, previously impossible with traditional silicon devices, with the ability to withstand higher voltages alongside greater efficiencies.
Hargrave Technologies delivered customised SiC solutions ranging from 200-500V, capable of output power levels exceeding 50kW for electric vertical take-off and landing applications, boasting greater reliability and a power density of 60W/g.
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